smd type transistors CXT2907A features absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current (dc) i c -600 ma power dissipation p d 1.2 junction temperature t j 150 storage temperature t stg -65to+150 thermal resistance ja 104 /w w high current (max.600ma) low voltage (max.60v) smd type ic smd type transistors smd type ic smd type transistors product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0;v cb = -50 v -10 na i e =0;v cb =-50v;t j = 125 -10 a emitter-base cut-off current i ebo i c =0;v eb =-5v -50 na i c =-0.1ma;v ce =-10v 75 i c =-1ma;v ce = -10 v 100 i c =-10ma;v ce = -10 v 100 i c = -150 ma; v ce = -10 v 100 300 i c = -500 ma; v ce =-10v 50 i c = -150 ma; i b = -15ma i c = -500 ma; i b =-50ma -1.6 v i c = -150 ma; i b =-15ma -1.3 v i c = -500 ma; i b =-50ma -2.6 v turn-on time t on 45 ns delay time t d 10 ns rise time t r 40 ns turn-off time t off 100 ns storage time t s 80 ns fall time t f 30 ns transition frequency f t i c =-50ma;v ce = -20 v; f = 100 mhz 200 mhz v cc = 30v, be -0.5v,i c i v cc = -6.0v,i c = -150ma, b1 i b2 = collector-base cut-off current i cbo dc current gain collector-emitter saturation voltage base-emitter saturation voltage h fe v cesat v besat = -150ma, i b1 = -15ma -15ma = = v -0.4 v smd type transistors CXT2907A smd type ic smd type transistors smd type ic smd type transistors product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
typical characteristics typical pulsed current gain vs collector current 0.1 0.3 1 3 10 30 100 300 0 100 200 300 400 500 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 5v ce input and output capacitance vs reverse bias voltage 0.1 1 10 50 0 4 8 12 16 20 reverse bias voltage (v) capacitance (pf) c ob c ib collect or-cutoff current vs ambie nt temperature 25 50 75 100 125 0.01 0. 1 1 10 10 0 t - a mbi e nt t emp er at ur e ( c) i - collector current (na) a cbo v = 35v cb collector-emitter saturation voltage vs collect or curre nt 110100500 0 0. 1 0. 2 0. 3 0. 4 0. 5 i - collector curre nt (ma) v - collector emitte r voltage (v) c cesat = 10 25 c - 40 c 125 c base-emitt er saturation voltage vs collect or curre nt 110100500 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter voltage (v) c besat 25 c - 40 c 125 c = 10 base emitter on voltage vs collect or curre nt 0.1 1 10 25 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter on voltage (v) c be( on) v = 5v ce 25 c - 40 c 125 c smd type transistors smd type transistors CXT2907A smd type ic smd type transistors smd type ic smd type transistors product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
|
